MQW

基本解释

It can be applied to an arbitary refractive index profile of the MQW waveguide.
该公式是偏振态和量子阱波导折射率分布的函数。
InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
采用 In Ga As/ Ga As作为多量子阱 SEED器件的有源区 ;从而获得了 980 nm工作波长 .
By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure.
从实验的数据得知，在室温下，样品的矽发光强度随著注入电流的增加而有显著的增强；
In particular, there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.
特别是在微腔多量子阱结构中存在一个最佳阱数对应着阈值电流密度的最小值。
Thin SiN layers and nitride-based multiquantum well( MQW) light emitting diode( LED) structures with conventional single GaN buffer and GaN/ SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD).
摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/化硅双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。