memory cell array

基本解释

The invention discloses a memory cell array arranged multiple in rows and lines.
本发明公开了存储器单元阵列，以多行与多列排列。
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In a memory cell array, a plurality of memory cells having ferroelectric capacitors amplifies the potential of the bit lines of each memory cell.
半导体存储装置。在存储单元阵列中设置具有铁电电容器的多个存储单元。多个检测放大器电路使各存储单元的位线的电位放大。
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Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
实施例包括个别存储单元、这种存储单元的阵列、操作所述存储单元或所述存储单元阵列的方法、以及其制造方法。