silicon rectifier diode

基本解释

The origin of △UF of automobile silicon rectifier diode is introduced here.
介绍汽车硅整流二极管△UF的由来，详细阐述实验中影响△UF值的各项因素及降低△UF的方法。
Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400V.
硅功率整流二极管，300安培。阴极情况。最大重复峰值反向电压400V。
Based on experience of nearly 20 years, the author discusses the feasibility of replacing molybdenum with iron on silicon rectifier diode core chip according to research and experiments.
以作者近20年的生产实践过程为背景，以研究试验为依据，探讨汽车硅整流二极管芯基片以铁代钼的可行性。